Semiconductors
Sand, refined into the bottleneck of the world economy.
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ASML
Atari 2600
Commodore 64
DDR4 SDRAM
DDR5 SDRAM
Flash memory
Flash memory is a block-erasable, non-volatile semiconductor memory invented by Fujio Masuoka at Toshiba in 1980. It builds on EEPROM but replaces byte-wise erasure with faster block-wise erasure — enabled by floating-gate transistor design. The name 'flash' was coined by colleague Shōji Ariizumi to reflect that speed. Masuoka and colleagues presented NOR flash in 1984 and NAND flash at the 1987 IEDM. Toshiba began marketing flash memory and commercially launched NAND flash — both in 1987. The first published implementation held only 8192 bytes but became the basis for larger-capacity versions. Flash does not support byte-level writes or in-place updates; erasure is all-or-nothing per block. It cannot replace RAM or true EEPROM where fine-grained modification is required. Flash changed how portable devices store firmware and user data, enabling compact, shock-resistant, low-power storage that scales without moving parts — a prerequisite for digital cameras, USB drives, SSDs and smartphones.
GlobalFoundries
Maxim Integrated
NXP Semiconductors
Semiconductor
Samsung Electronics
STMicroelectronics
Texas Instruments
Integrated circuit
The integrated circuit emerged in two distinct forms: Kilby’s 1958 germanium prototype proved integration was possible but relied on external wires; Noyce’s 1959 silicon monolithic chip, built using the planar process and on-chip aluminium interconnects, enabled mass production. Modern ICs follow Noyce’s architecture — not Kilby’s — because scalability required eliminating manual wire bonding. The invention’s value lies not in its first demonstration, but in its first manufacturable form.
Personal computer
Thermistor
The thermistor is a semiconductor resistor whose resistance changes strongly with temperature. Michael Faraday discovered its NTC behaviour in silver sulfide in 1833. Commercial production did not begin until the 1930s due to manufacturing difficulty and limited applications. Samuel Ruben invented a commercially viable version in 1930.
Transistor
The point-contact transistor emerged not from theoretical prediction but from iterative experiment—first with silicon and distilled water, then germanium and anodised surfaces—after Shockley’s field-effect design failed. It delivered real amplification, but only at low frequencies, and revealed surface states as decisive in semiconductor behaviour. Its mechanism relied on hole injection, not field modulation. It changed electronics by enabling solid-state amplification, but did not deliver on the original FET promise.